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| DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Cre F PARAMETER collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance noise figure up to Ts = 145 C (note 1) Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj = 25 C Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 C Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 C open base CONDITIONS - - - 5.5 1.3 3.3 TYP. PINNING PIN 1 2 3 DESCRIPTION Code: FB emitter collector base 1 Bottom view 2 page BFQ19 3 MBK514 Fig.1 SOT89. MAX. 15 100 1 - - - UNIT V mA W GHz pF dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 145 C (note 1) open base open collector CONDITIONS open emitter - - - - - - -65 - MIN. MAX. 20 15 3.3 100 150 1 150 175 UNIT V V V mA mA W C C September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 70 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz IC = 50 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C F Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2 BFQ19 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 145 C (note 1) THERMAL RESISTANCE 30 K/W MIN. - 25 - - - 4.4 - - - TYP. - 80 1.6 5 1.3 5.5 11.5 7.5 3.3 MAX. 100 - - - - - - - - UNIT nA pF pF pF GHz dB dB dB noise figure IC = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 C September 1995 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 MBB774 MBB830 handbook, halfpage 120 handbook, halfpage 5 h FE Cc (pF) 4 80 3 2 40 1 0 0 40 80 I C (mA) 120 0 0 5 10 15 V CB (V) 20 VCE = 10 V; Tj = 25 C. IE = ie = 0; f = 1 MHz; Tj = 25 C. Fig.2 DC current gain as a function of collector current. Fig.3 Collector capacitance as a function of collector-base voltage. handbook, halfpage 8 MBB773 fT (GHz) 6 4 2 0 0 40 80 I C (mA) 120 VCE = 10 V; f = 500 MHz; Tj = 25 C. Fig.4 Transition frequency as a function of collector current. September 1995 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads BFQ19 SOT89 D B A b3 E HE L 1 2 b2 3 c wM b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ19 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 6 |
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